{"id":2226,"date":"2026-07-21T15:03:04","date_gmt":"2026-07-21T15:03:04","guid":{"rendered":"https:\/\/prism.ucsd.edu\/?page_id=2226"},"modified":"2026-08-04T23:43:01","modified_gmt":"2026-08-04T23:43:01","slug":"theme-3-devices-circuits","status":"publish","type":"page","link":"https:\/\/prism.ucsd.edu\/?page_id=2226","title":{"rendered":"Theme 3: Devices & Circuits – Research Highlights"},"content":{"rendered":"\t\t
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Theme 3: Devices & Circuits - Research Highlights<\/h2>\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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* \u201cSpecifically, Theme 3 explores ferroelectric gate stacks for 3D vertical NAND [1], ultra-low-leakage Amorphous Oxide Semiconductor (AOS) transistors for 3D DRAM [2], gain-cell embedded DRAM [3] and AOS Ferroelectric Field-Effect Transistors (FeFETs) [4] for SRAM augmentation, superlattice Phase-Change Memory (PCM) with reduced write energy [5], and a new sensing mechanism enabling ferroelectric non-volatile Capacitors (nvCap) [6].\u201d<\/span><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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References<\/strong>:\u00a0<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

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[1] H. J. Lee, M. Sohn, S. Yoo, Y. Lee, K. Kim, S.-G. Nam, Y. Park, S. Jo, D. Kim, J. Heo, W. Kim, D. Ha, A. I. Khan, S. Yu, D.-H. Choe, S. Datta, \u201cLaminated ferroelectric stack for enhanced ISPP slope and endurance in FE-NAND,\u201d\u00a0<\/span>IEEE<\/span>\u00a0<\/span>Electron Device Letters, vol. 47, no. 1, pp. 188-191, 2026.<\/div>
[2] K. Lee, S. Cho, P.-K. Hsu, J. Sharda, S. Datta, S. Yu, \u201cMonolithically stackable 1T1C\u202f3D DRAM: A technical survey,\u201d\u00a0<\/span>IEEE<\/span>\u00a0<\/span>Transactions on Electron Devices, vol. 73, no. 3, pp. 1092-1112, 2026.<\/div>
[3] J. Sonawane, S. Deng, K. Lee, F. G. Waqar, C. Zhang, O. Phadke, S. Datta, S. Yu, \u201cFAB gain cell memory: A folded asymmetric boosted design to improve sense margin for a refresh-free operation,\u201d\u00a0<\/span>IEEE<\/span>\u00a0<\/span>Symposium on VLSI Technology and Circuits (VLSI) 2026.<\/div>
[4] S. G. Kirtania, O. Phadke, E. Sarker, K. A. Aabrar, D. Chakraborty, F. Waqar, S. Jaewon, T. Pantha, S. Dutta, A. I. Khan, S. Yu, S. Datta, \u201cAmorphous indium oxide channel FeFETs with write voltage of 0.9V and endurance >1012 for refresh-free 1T-1FeFET embedded memory,\u201d\u00a0<\/span>IEEE<\/span>\u00a0<\/span>International Electron Devices Meeting (IEDM) 2024.<\/div>
[5] X. Wu, A.I. Khan, H. Lee, C.-F. Hsu, H. Zhang, H. Yu, N. Roy, A.V. Davydov, I. Takeuchi, X. Bao, H.-S.P. Wong, E. Pop, “Novel Nanocomposite-Superlattices for Low Energy and High Stability Nanoscale Phase-Change Memory,” Nature Commun. 15, 13 (2024).<\/div>
[6] J. Lee, C. Zhang, S. Park, H. Park, T.-H. Kim, L. J.-C. Liu, E. Ambrosi, M. Song, X. Bao, M.-F. Chang, S. Datta, S. Yu, \u201cMonolithic 3D integration of dual-gated ALD oxide-channel non-volatile capacitive memory on 40nm Si CMOS for digital compute-in-memory,\u201d\u00a0<\/span>IEEE<\/span>\u00a0<\/span>International Electron Devices Meeting (IEDM) 2025.<\/div>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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* \u201cTheme 3 has also demonstrated an nvCap-based Ternary Content-Addressable Memory (TCAM) array enabling charge-domain in-memory search for Hyper-Dimensional (HD) computing, with more than 40\u00d7 improvement in search energy\u2013delay product relative to conventional 16-transistor TCAM designs [7]”<\/span><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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References<\/strong>:\u00a0<\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

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[7] O. Phadke, J. Lee, P.-K. Hsu, C. Zhang, A. I. Khan, S. Datta, S. Yu, \u201cArray-level demonstration of charge-domain in-memory search using back-end-of-line compatible ferroelectric nonvolatile capacitors,\u201d\u00a0<\/span>IEEE<\/span>\u00a0International Electron Devices Meeting (IEDM) 2025.<\/span><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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* \u201cBesides, Theme 3 has explored exploratory two-dimensional materials as channel materials for access transistors along vertical sidewalls, including a vertical NAND prototype using a monolayer MoS\u2082 channel.\u201d<\/span><\/p>

* \u201cAnother notable strength of Theme 3 is its close integration with other research themes within PRISM. PRISM researchers completed the integration of the NeuroSim-Cache tool [8] with architectural simulators such as gem5, enabling emerging memory technologies to be evaluated within CPU, GPU, and FPGA system contexts\u201d<\/span><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t

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References:<\/strong><\/p>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t

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[8] F. G. Waqar, J. Kwak, J. Lee, O. Phadke, M. Shon, M. Gholamrezaei, K. Skadron, S. Yu, \u201cOptimization and benchmarking of monolithically stackable gain cell memory for last-level cache,\u201d\u00a0<\/span>IEEE<\/span>\u00a0<\/span>Transactions on Computers, vol. 75, no. 3, pp. 760-775, 2026.<\/div>\t\t\t\t\t\t\t\t<\/div>\n\t\t\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/div>\n\t\t\t\t\t<\/div>\n\t\t<\/section>\n\t\t\t\t
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Theme 3: Devices & Circuits – Research Highlights * \u201cSpecifically, Theme 3 explores ferroelectric gate stacks for 3D vertical NAND [1], ultra-low-leakage Amorphous Oxide Semiconductor (AOS) transistors for 3D DRAM [2], gain-cell embedded DRAM [3] and AOS Ferroelectric Field-Effect Transistors (FeFETs) [4] for SRAM augmentation, superlattice Phase-Change Memory (PCM) with […]<\/p>\n","protected":false},"author":2,"featured_media":0,"parent":2182,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-templates\/template-pagebuilder-full-width.php","meta":{"footnotes":""},"class_list":["post-2226","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/2226","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=2226"}],"version-history":[{"count":14,"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/2226\/revisions"}],"predecessor-version":[{"id":2344,"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/2226\/revisions\/2344"}],"up":[{"embeddable":true,"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=\/wp\/v2\/pages\/2182"}],"wp:attachment":[{"href":"https:\/\/prism.ucsd.edu\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=2226"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}